Detailed numerical simulation of nanoelectronic devices
Issues related to the numerical simulation of nanoelectronic devices are addressed, with particular reference to the approach adopted in the EU funded project NANOTCAD. Basics of numerical simulation are described, as well as the structure of the 2D and 3D codes for the simulation of semiconductor devices developed within the NANOTCAD project. Reference is provided to typical simulation results, to additional material and to possibility of using the NANOTCAD codes, with sample input files and complete user's manuals on the PHANTOMS simulation hub.
noise, nanoelectronics, shot noise, mesoscopic devices, ballistic MOSFETS.