Noise in nanoelectronic devices
In this paper we present a brief review of properties of noise in nanoelectronic devices, focusing on shot noise, that is particularly relevant in nanoscale devices and when few electrons determine device behaviour. We review cases in which shot noise is significantly altered with respect to full shot noise, i.e., that associated to a Poissonian process, in order to gain insights into the details of the transport mechanisms. We focus both on mesoscopic (ballistic) devices at very low temperature and on more conventional MOSFETs at the nanoscale, that are entering mass production and, due to their small scale, exhibit noise properties similar to those observed in more exotic mesoscopic devices.
noise, nanoelectronics, shot noise, mesoscopic devices, ballistic MOSFETs.